N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB Infineon AUIRF3808

Κωδικός Προϊόντος της RS: 145-9618Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: AUIRF3808
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

140 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.66mm

Height

16.51mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB Infineon AUIRF3808

P.O.A.

N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB Infineon AUIRF3808
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

140 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.66mm

Height

16.51mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.