N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409

Κωδικός Προϊόντος της RS: 145-8807Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: AUIRFB8409
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

195 A, 409 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.43mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Height

9.02mm

Series

COOLiRFET

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

COOLiRFET™ Power MOSFET, Infineon

Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409

P.O.A.

N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

195 A, 409 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.43mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Height

9.02mm

Series

COOLiRFET

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

COOLiRFET™ Power MOSFET, Infineon

Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.