N-Channel MOSFET, 38 A, 300 V, 3-Pin TO-247 Infineon AUIRFP4409

Κωδικός Προϊόντος της RS: 145-9344Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: AUIRFP4409
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

300 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

69 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

341 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

21.1mm

Typical Gate Charge @ Vgs

83 nC @ 10 V

Height

16.13mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 38 A, 300 V, 3-Pin TO-247 Infineon AUIRFP4409

P.O.A.

N-Channel MOSFET, 38 A, 300 V, 3-Pin TO-247 Infineon AUIRFP4409
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

300 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

69 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

341 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

21.1mm

Typical Gate Charge @ Vgs

83 nC @ 10 V

Height

16.13mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.