N-Channel MOSFET, 84 A, 25 V, 8-Pin TDSON Infineon BSC032NE2LSATMA1

Κωδικός Προϊόντος της RS: 133-9939Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSC032NE2LSATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

25 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

6.35mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

5.35mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Height

1.1mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 84 A, 25 V, 8-Pin TDSON Infineon BSC032NE2LSATMA1

P.O.A.

N-Channel MOSFET, 84 A, 25 V, 8-Pin TDSON Infineon BSC032NE2LSATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

25 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

6.35mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

5.35mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Height

1.1mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more