Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin TISON Infineon BSC0921NDIATMA1

Κωδικός Προϊόντος της RS: 133-9832Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSC0921NDIATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

TISON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

+20 V

Length

5.1mm

Typical Gate Charge @ Vgs

22 nC @ 4.5 V, 5.9 nC @ 4.5 V

Number of Elements per Chip

2

Width

6.1mm

Maximum Operating Temperature

+150 °C

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Height

1.1mm

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™ Dual Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin TISON Infineon BSC0921NDIATMA1

P.O.A.

Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin TISON Infineon BSC0921NDIATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

TISON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

+20 V

Length

5.1mm

Typical Gate Charge @ Vgs

22 nC @ 4.5 V, 5.9 nC @ 4.5 V

Number of Elements per Chip

2

Width

6.1mm

Maximum Operating Temperature

+150 °C

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Height

1.1mm

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™ Dual Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more