N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon BSP149H6327XTSA1

Κωδικός Προϊόντος της RS: 911-4808Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSP149H6327XTSA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

660 mA

Maximum Drain Source Voltage

200 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

11 nC @ 5 V

Height

1.6mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0,86

Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,066

Μονάδας (Σε ένα καρούλι των 1000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon BSP149H6327XTSA1

€ 0,86

Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,066

Μονάδας (Σε ένα καρούλι των 1000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon BSP149H6327XTSA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

660 mA

Maximum Drain Source Voltage

200 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

11 nC @ 5 V

Height

1.6mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.