P-Channel MOSFET Transistor, 1.9 A, 60 V, 3-Pin SOT-223 Infineon BSP171PH6327XTSA1

Κωδικός Προϊόντος της RS: 911-4791Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSP171PH6327XTSA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

3.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Height

1.6mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,50

Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,62

Μονάδας (Σε ένα καρούλι των 1000) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET Transistor, 1.9 A, 60 V, 3-Pin SOT-223 Infineon BSP171PH6327XTSA1

€ 0,50

Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,62

Μονάδας (Σε ένα καρούλι των 1000) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET Transistor, 1.9 A, 60 V, 3-Pin SOT-223 Infineon BSP171PH6327XTSA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
1000 - 1000€ 0,50€ 500,00
2000 - 2000€ 0,48€ 480,00
3000+€ 0,45€ 450,00

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

3.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Height

1.6mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.