N-Channel MOSFET Transistor, 190 mA, 800 V, 3 + Tab-Pin SOT-223 Infineon BSP300H6327XUSA1

Κωδικός Προϊόντος της RS: 911-4861Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSP300H6327XUSA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

800 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.8 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

6.5mm

Width

3.5mm

Number of Elements per Chip

1

Height

1.6mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET Transistor, 190 mA, 800 V, 3 + Tab-Pin SOT-223 Infineon BSP300H6327XUSA1

P.O.A.

N-Channel MOSFET Transistor, 190 mA, 800 V, 3 + Tab-Pin SOT-223 Infineon BSP300H6327XUSA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

800 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.8 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

6.5mm

Width

3.5mm

Number of Elements per Chip

1

Height

1.6mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.