Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole

Κωδικός Προϊόντος της RS: 133-9873Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IGW30N60TPXKSA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

53 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

200 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

30kHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1050pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.13mJ

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 3,28

Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4,067

Μονάδας (Σε ένα πακέτο των 2) (Including VAT) Με Φ.Π.Α

Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole
Επιλέγξτε συσκευασία

€ 3,28

Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4,067

Μονάδας (Σε ένα πακέτο των 2) (Including VAT) Με Φ.Π.Α

Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
2 - 18€ 3,28€ 6,56
20 - 48€ 3,00€ 6,00
50 - 98€ 2,85€ 5,70
100 - 198€ 2,67€ 5,34
200+€ 2,55€ 5,10

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Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

53 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

200 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

30kHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1050pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.13mJ

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.