Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

Κωδικός Προϊόντος της RS: 124-8809Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IKW30N60TFKSA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

45 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

187 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1630pF

Maximum Operating Temperature

+175 °C

Energy Rating

2.1mJ

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 4,92

Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 6,101

Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α

Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

€ 4,92

Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 6,101

Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α

Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
30 - 30€ 4,92€ 147,60
60+€ 4,69€ 140,70

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Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

45 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

187 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1630pF

Maximum Operating Temperature

+175 °C

Energy Rating

2.1mJ

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.