N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 Infineon IPP60R199CPXKSA1

Κωδικός Προϊόντος της RS: 911-0872Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPP60R199CPXKSA1
brand-logo
View all in MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

490 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Height

15.95mm

Series

CoolMOS CP

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

P.O.A.

N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 Infineon IPP60R199CPXKSA1

P.O.A.

N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 Infineon IPP60R199CPXKSA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

490 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Height

15.95mm

Series

CoolMOS CP

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more