N-Channel MOSFET, 31 A, 650 V, 3-Pin TO-247 Infineon IPW60R099CPFKSA1

Κωδικός Προϊόντος της RS: 911-5022Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPW60R099CPFKSA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Height

21.1mm

Series

CoolMOS CP

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Germany

Λεπτομέρειες Προϊόντος

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 7,81

Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,684

Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 31 A, 650 V, 3-Pin TO-247 Infineon IPW60R099CPFKSA1

€ 7,81

Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,684

Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 31 A, 650 V, 3-Pin TO-247 Infineon IPW60R099CPFKSA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Height

21.1mm

Series

CoolMOS CP

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Germany

Λεπτομέρειες Προϊόντος

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.