N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF

Κωδικός Προϊόντος της RS: 124-9004Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRFB3607PBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.66mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Height

9.02mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,24

Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,538

Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF

€ 1,24

Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,538

Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
50 - 50€ 1,24€ 62,00
100 - 200€ 1,06€ 53,00
250 - 450€ 1,01€ 50,50
500 - 1200€ 0,96€ 48,00
1250+€ 0,88€ 44,00

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.66mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Height

9.02mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.