N-Channel MOSFET, 290 A, 100 V, 3-Pin TO-247AC Infineon IRFP4468PBF

Κωδικός Προϊόντος της RS: 124-9019Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRFP4468PBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

290 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

360 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

20.7mm

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 8,39

Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 10,404

Μονάδας (Σε μία ράγα των 25) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 290 A, 100 V, 3-Pin TO-247AC Infineon IRFP4468PBF

€ 8,39

Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 10,404

Μονάδας (Σε μία ράγα των 25) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 290 A, 100 V, 3-Pin TO-247AC Infineon IRFP4468PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
25 - 25€ 8,39€ 209,75
50 - 100€ 8,09€ 202,25
125+€ 7,86€ 196,50

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

290 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

360 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

20.7mm

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.