N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC Infineon IRFP4768PBF

Κωδικός Προϊόντος της RS: 124-9021Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRFP4768PBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

93 A

Maximum Drain Source Voltage

250 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Height

20.7mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 7,86

Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,746

Μονάδας (Σε μία ράγα των 25) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC Infineon IRFP4768PBF

€ 7,86

Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,746

Μονάδας (Σε μία ράγα των 25) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC Infineon IRFP4768PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

93 A

Maximum Drain Source Voltage

250 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Height

20.7mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Mexico

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.