Dual N-Channel MOSFET, 19 A, 650 V, 3-Pin TO220F onsemi FCPF165N65S3L1

Κωδικός Προϊόντος της RS: 146-3369Κατασκευαστής: ON SemiconductorΚωδικός Κατασκευαστή: FCPF165N65S3L1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Width

4.6mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

10.3mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

15.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Series

SuperFET III

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

Dual N-Channel MOSFET, 19 A, 650 V, 3-Pin TO220F onsemi FCPF165N65S3L1

P.O.A.

Dual N-Channel MOSFET, 19 A, 650 V, 3-Pin TO220F onsemi FCPF165N65S3L1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Width

4.6mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

10.3mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

15.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Series

SuperFET III

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor