Dual N-Channel MOSFET, 78 A, 100 V, 8-Pin PQFN onsemi FDMS86182

Κωδικός Προϊόντος της RS: 146-4090Κατασκευαστής: ON SemiconductorΚωδικός Κατασκευαστή: FDMS86182
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

78 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

26 @ 10 V nC

Width

5.85mm

Number of Elements per Chip

2

Forward Diode Voltage

1.3V

Height

1.05mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Dual N-Channel MOSFET, 78 A, 100 V, 8-Pin PQFN onsemi FDMS86182
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P.O.A.

Dual N-Channel MOSFET, 78 A, 100 V, 8-Pin PQFN onsemi FDMS86182
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

78 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

26 @ 10 V nC

Width

5.85mm

Number of Elements per Chip

2

Forward Diode Voltage

1.3V

Height

1.05mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor