N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3

Κωδικός Προϊόντος της RS: 124-2251Κατασκευαστής: VishayΚωδικός Κατασκευαστή: SIHH26N60E-T1-GE3
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerPAK 8 x 8

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

135 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

202 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

8.1mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.1mm

Forward Diode Voltage

1.2V

Series

E Series

Minimum Operating Temperature

-55 °C

Height

1mm

Χώρα Προέλευσης

Taiwan, Province Of China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

MOSFET Transistors, Vishay Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 7,31

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,06

Μονάδας (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3
Επιλέγξτε συσκευασία

€ 7,31

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,06

Μονάδας (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 7,31
10 - 49€ 5,49
50 - 99€ 4,69
100 - 249€ 4,21
250+€ 4,03

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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerPAK 8 x 8

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

135 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

202 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

8.1mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.1mm

Forward Diode Voltage

1.2V

Series

E Series

Minimum Operating Temperature

-55 °C

Height

1mm

Χώρα Προέλευσης

Taiwan, Province Of China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

MOSFET Transistors, Vishay Semiconductor