N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™
Package Type
MG-WDSON-2
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.0104 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 3.800,00
€ 0,76 Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 4.712,00
€ 0,942 Μονάδας (Σε ένα καρούλι των 5000) Με Φ.Π.Α
5000
€ 3.800,00
€ 0,76 Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 4.712,00
€ 0,942 Μονάδας (Σε ένα καρούλι των 5000) Με Φ.Π.Α
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™
Package Type
MG-WDSON-2
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.0104 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products