Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP170PH6327XTSA1

Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 55,00
€ 1,10 Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 68,20
€ 1,364 Μονάδας (Σε ένα πακέτο των 50) Με Φ.Π.Α
Standard
50
€ 55,00
€ 1,10 Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 68,20
€ 1,364 Μονάδας (Σε ένα πακέτο των 50) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
---|---|---|
50 - 50 | € 1,10 | € 55,00 |
100 - 200 | € 0,81 | € 40,50 |
250 - 450 | € 0,78 | € 39,00 |
500 - 1200 | € 0,73 | € 36,50 |
1250+ | € 0,70 | € 35,00 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.