Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V

Κωδικός Προϊόντος της RS: 244-5819PΚατασκευαστής: InfineonΚωδικός Κατασκευαστή: FD150R12RT4HOSA1
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Προβολή όλων σε IGBTs

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

790 W

Number of Transistors

1

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P.O.A.

Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
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P.O.A.

Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V

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Ideate. Create. Collaborate

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Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

790 W

Number of Transistors

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more