Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
11.3mm
Width
4.9mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Height
16.27mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 1,69
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2,096
Μονάδας (Σε ένα πακέτο των 5) (Including VAT) Με Φ.Π.Α
Standard
5
€ 1,69
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2,096
Μονάδας (Σε ένα πακέτο των 5) (Including VAT) Με Φ.Π.Α
Standard
5
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
---|---|---|
5 - 45 | € 1,69 | € 8,45 |
50 - 120 | € 1,51 | € 7,55 |
125 - 245 | € 1,44 | € 7,20 |
250 - 495 | € 1,36 | € 6,80 |
500+ | € 1,29 | € 6,45 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
11.3mm
Width
4.9mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Height
16.27mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.