Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Series
StrongIRFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
274 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Λεπτομέρειες Προϊόντος
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 5,94
€ 2,97 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,37
€ 3,683 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
€ 5,94
€ 2,97 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,37
€ 3,683 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
---|---|---|
2 - 18 | € 2,97 | € 5,94 |
20 - 48 | € 2,70 | € 5,40 |
50 - 98 | € 2,57 | € 5,14 |
100 - 198 | € 2,44 | € 4,88 |
200+ | € 2,27 | € 4,54 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Series
StrongIRFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
274 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Λεπτομέρειες Προϊόντος
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.