Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
3.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
1.8mm
Series
IRFL4310PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
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P.O.A.
2500
P.O.A.
2500
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
3.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
1.8mm
Series
IRFL4310PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V