N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

Κωδικός Προϊόντος της RS: 177-5342Κατασκευαστής: IXYSΚωδικός Κατασκευαστή: IXFN210N30P3
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

192 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar3

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.5 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

38.23mm

Typical Gate Charge @ Vgs

268 nC @ 10 V

Height

9.6mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 58,43

Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 72,453

Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

10

Διατίθεται σε πολλαπλάσια από 10
10€ 584,30
20€ 1.168,60
30€ 1.752,90
40€ 2.337,20
50€ 2.921,50
60€ 3.505,80
70€ 4.090,10
80€ 4.674,40
90€ 5.258,70
100€ 5.843,00
110€ 6.427,30
120€ 7.011,60
130€ 7.595,90
140€ 8.180,20
150€ 8.764,50

€ 58,43

Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 72,453

Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

10

Διατίθεται σε πολλαπλάσια από 10
10€ 584,30
20€ 1.168,60
30€ 1.752,90
40€ 2.337,20
50€ 2.921,50
60€ 3.505,80
70€ 4.090,10
80€ 4.674,40
90€ 5.258,70
100€ 5.843,00
110€ 6.427,30
120€ 7.011,60
130€ 7.595,90
140€ 8.180,20
150€ 8.764,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

192 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar3

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.5 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

38.23mm

Typical Gate Charge @ Vgs

268 nC @ 10 V

Height

9.6mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more