Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiMaximum Continuous Collector Current
70 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
300 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 5,52
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 6,845
Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α
30
€ 5,52
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 6,845
Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α
30
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
---|---|---|
30 - 90 | € 5,52 | € 165,60 |
120 - 240 | € 4,46 | € 133,80 |
270 - 480 | € 4,29 | € 128,70 |
510 - 990 | € 4,13 | € 123,90 |
1020+ | € 3,71 | € 111,30 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiMaximum Continuous Collector Current
70 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
300 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.