Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
8A
Maximum Collector Emitter Voltage Vceo
450V
Package Type
TO-220
Mount Type
Through Hole
Transistor Configuration
Single
Minimum Operating Temperature
-65°C
Maximum Power Dissipation Pd
70W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
12
Maximum Emitter Base Voltage VEBO
12V
Pin Count
3
Maximum Operating Temperature
150°C
Series
BUL1102E
Standards/Approvals
No
Length
10.4mm
Height
30.6mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 66,50
€ 1,33 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 82,46
€ 1,649 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
€ 66,50
€ 1,33 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 82,46
€ 1,649 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
50
| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 50 - 450 | € 1,33 | € 66,50 |
| 500 - 1200 | € 1,31 | € 65,50 |
| 1250+ | € 1,31 | € 65,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
8A
Maximum Collector Emitter Voltage Vceo
450V
Package Type
TO-220
Mount Type
Through Hole
Transistor Configuration
Single
Minimum Operating Temperature
-65°C
Maximum Power Dissipation Pd
70W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
12
Maximum Emitter Base Voltage VEBO
12V
Pin Count
3
Maximum Operating Temperature
150°C
Series
BUL1102E
Standards/Approvals
No
Length
10.4mm
Height
30.6mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
