Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
80 V
Package Type
M250
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Power Dissipation
108 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Width
6.09mm
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Transistor Material
Si
Length
9.91mm
Height
3.94mm
Typical Power Gain
17.7 dB
Λεπτομέρειες Προϊόντος
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 195,40
Each (In a Tray of 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 242,296
Each (In a Tray of 25) (Including VAT) Με Φ.Π.Α
25
€ 195,40
Each (In a Tray of 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 242,296
Each (In a Tray of 25) (Including VAT) Με Φ.Π.Α
25
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
80 V
Package Type
M250
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Power Dissipation
108 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Width
6.09mm
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Transistor Material
Si
Length
9.91mm
Height
3.94mm
Typical Power Gain
17.7 dB
Λεπτομέρειες Προϊόντος
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.