SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.055 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 688,20
€ 22,94 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 853,37
€ 28,446 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 688,20
€ 22,94 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 853,37
€ 28,446 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.055 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products