N-Channel MOSFET Transistor, 7 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STMicroelectronics STL13N60M6

Κωδικός Προϊόντος της RS: 192-4657Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STL13N60M6
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 5 x 6 HV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

415 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,87

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,319

Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

N-Channel MOSFET Transistor, 7 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STMicroelectronics STL13N60M6

€ 1,87

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,319

Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

N-Channel MOSFET Transistor, 7 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STMicroelectronics STL13N60M6
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 5 x 6 HV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

415 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more