Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
158 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.4mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
9.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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€ 106,00
€ 2,12 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
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€ 2,629 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
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€ 106,00
€ 2,12 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 131,44
€ 2,629 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
158 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.4mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
9.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.