Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSSOP Taiwan Semi TSM6968DCA RVG

Κωδικός Προϊόντος της RS: 398-449Κατασκευαστής: Taiwan SemiconductorΚωδικός Κατασκευαστή: TSM6968DCA RVG
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

TSSOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.04 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

4.5mm

Width

3.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.05mm

Λεπτομέρειες Προϊόντος

Dual N-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,50

Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,62

Μονάδας (Σε ένα πακέτο των 50) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSSOP Taiwan Semi TSM6968DCA RVG
Επιλέγξτε συσκευασία

€ 0,50

Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,62

Μονάδας (Σε ένα πακέτο των 50) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSSOP Taiwan Semi TSM6968DCA RVG
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

TSSOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.04 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

4.5mm

Width

3.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.05mm

Λεπτομέρειες Προϊόντος

Dual N-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more