Wolfspeed SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK C3M0120090J

Κωδικός Προϊόντος της RS: 192-3492Κατασκευαστής: WolfspeedΚωδικός Κατασκευαστή: C3M0120090J
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Number of Elements per Chip

1

Width

9.12mm

Length

10.23mm

Typical Gate Charge @ Vgs

17.3 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

4.57mm

Χώρα Προέλευσης

China

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€ 30,70

€ 15,35 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 38,07

€ 19,034 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α

Wolfspeed SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK C3M0120090J

€ 30,70

€ 15,35 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 38,07

€ 19,034 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α

Wolfspeed SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK C3M0120090J

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
2 - 18€ 15,35€ 30,70
20+€ 15,30€ 30,60

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Number of Elements per Chip

1

Width

9.12mm

Length

10.23mm

Typical Gate Charge @ Vgs

17.3 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

4.57mm

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more