N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G

RS Stock No.: 171-3625Brand: Taiwan SemiconductorManufacturers Part No.: TSM4N80CI C0GIMPA: 0
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Technical Document

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

1

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-55 °C

Transistor Configuration

Single

Forward Diode Voltage

1.5V

Mounting Type

Through Hole

Minimum Gate Threshold Voltage

2V

Maximum Operating Temperature

+150 °C

Maximum Gate Threshold Voltage

4V

Maximum Drain Source Voltage

800 V

Maximum Gate Source Voltage

±30 V

Width

4.6mm

Maximum Continuous Drain Current

4 A

Maximum Power Dissipation

38.7 W

Package Type

ITO-220

Length

10mm

Height

15mm

Maximum Drain Source Resistance

3 Ω

Typical Gate Charge @ Vgs

20 nC @ 10 V

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P.O.A.

N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G
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P.O.A.

N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G
Stock information temporarily unavailable.
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Technical Document

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

1

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-55 °C

Transistor Configuration

Single

Forward Diode Voltage

1.5V

Mounting Type

Through Hole

Minimum Gate Threshold Voltage

2V

Maximum Operating Temperature

+150 °C

Maximum Gate Threshold Voltage

4V

Maximum Drain Source Voltage

800 V

Maximum Gate Source Voltage

±30 V

Width

4.6mm

Maximum Continuous Drain Current

4 A

Maximum Power Dissipation

38.7 W

Package Type

ITO-220

Length

10mm

Height

15mm

Maximum Drain Source Resistance

3 Ω

Typical Gate Charge @ Vgs

20 nC @ 10 V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more