Texas Instruments NexFET N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP CSD19502Q5BT

RS Stock No.: 133-0154Brand: Texas InstrumentsManufacturers Part No.: CSD19502Q5BT
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

195 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

€ 6.26

€ 3.13 Each (In a Pack of 2) (Exc. Vat)

€ 7.76

€ 3.881 Each (In a Pack of 2) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP CSD19502Q5BT
Select packaging type

€ 6.26

€ 3.13 Each (In a Pack of 2) (Exc. Vat)

€ 7.76

€ 3.881 Each (In a Pack of 2) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP CSD19502Q5BT
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
2 - 8€ 3.13€ 6.26
10 - 18€ 3.03€ 6.06
20 - 48€ 2.77€ 5.54
50 - 98€ 2.53€ 5.06
100+€ 2.45€ 4.90

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

195 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more