Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 167.00
€ 3.34 Each (Supplied on a Reel) (Exc. Vat)
€ 207.08
€ 4.142 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
€ 167.00
€ 3.34 Each (Supplied on a Reel) (Exc. Vat)
€ 207.08
€ 4.142 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 120 | € 3.34 | € 16.70 |
| 125 - 245 | € 3.05 | € 15.25 |
| 250 - 495 | € 2.92 | € 14.60 |
| 500+ | € 2.79 | € 13.95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products