Fairchild HGTG30N60C3D IGBT, 63 A 600 V, 3-Pin TO-247, Through Hole

Κωδικός Προϊόντος της RS: 124-1670Κατασκευαστής: Fairchild SemiconductorΚωδικός Κατασκευαστή: HGTG30N60C3D
brand-logo
Προβολή όλων σε IGBTs

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

63 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through Hole
P.O.A.Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

P.O.A.

Fairchild HGTG30N60C3D IGBT, 63 A 600 V, 3-Pin TO-247, Through Hole

P.O.A.

Fairchild HGTG30N60C3D IGBT, 63 A 600 V, 3-Pin TO-247, Through Hole
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through Hole
P.O.A.Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

63 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through Hole
P.O.A.Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α