Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
FujiMaximum Continuous Collector Current
1 kA
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
6.25 kW
Package Type
M272
Configuration
Series
Mounting Type
Screw Mount
Channel Type
N
Pin Count
6
Dimensions
250 x 89 x 38mm
Λεπτομέρειες Προϊόντος
IGBT Modules 2-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
1
P.O.A.
1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
FujiMaximum Continuous Collector Current
1 kA
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
6.25 kW
Package Type
M272
Configuration
Series
Mounting Type
Screw Mount
Channel Type
N
Pin Count
6
Dimensions
250 x 89 x 38mm
Λεπτομέρειες Προϊόντος
IGBT Modules 2-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.