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Fuji 6MBi50VA-120-50, M636 , N-Channel 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Screw Mount

Κωδικός Προϊόντος της RS: 747-1055Κατασκευαστής: FujiΚωδικός Κατασκευαστή: 6MBi50VA-120-50
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Προβολή όλων σε IGBTs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Fuji

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

280 W

Package Type

M636

Configuration

3 Phase Bridge

Mounting Type

Screw Mount

Channel Type

N

Pin Count

28

Dimensions

107.5 x 45 x 17mm

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

IGBT Modules 6-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Infineon FS75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V, 28-Pin EconoPACK 2, PCB Mount
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

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Fuji 6MBi50VA-120-50, M636 , N-Channel 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Screw Mount

P.O.A.

Fuji 6MBi50VA-120-50, M636 , N-Channel 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Screw Mount
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon FS75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V, 28-Pin EconoPACK 2, PCB Mount
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Fuji

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

280 W

Package Type

M636

Configuration

3 Phase Bridge

Mounting Type

Screw Mount

Channel Type

N

Pin Count

28

Dimensions

107.5 x 45 x 17mm

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

IGBT Modules 6-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon FS75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V, 28-Pin EconoPACK 2, PCB Mount
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α