Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Series
SIPMOS
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Number of Elements per Chip
1
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 0,15
Μονάδας (Σε ένα καρούλι των 500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,186
Μονάδας (Σε ένα καρούλι των 500) (Including VAT) Με Φ.Π.Α
500
€ 0,15
Μονάδας (Σε ένα καρούλι των 500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,186
Μονάδας (Σε ένα καρούλι των 500) (Including VAT) Με Φ.Π.Α
500
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
---|---|---|
500 - 500 | € 0,15 | € 75,00 |
1000 - 2000 | € 0,10 | € 50,00 |
2500 - 4500 | € 0,10 | € 50,00 |
5000 - 12000 | € 0,10 | € 50,00 |
12500+ | € 0,10 | € 50,00 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Series
SIPMOS
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Number of Elements per Chip
1
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.