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Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

Κωδικός Προϊόντος της RS: 906-2892Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IKW25N120H3FKSA1
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Προβολή όλων σε IGBTs

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

326 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1430pF

Maximum Operating Temperature

+175 °C

Energy Rating

4.3mJ

Λεπτομέρειες Προϊόντος

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 14,88

€ 7,44 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 18,45

€ 9,226 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α

Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Επιλέγξτε συσκευασία

€ 14,88

€ 7,44 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 18,45

€ 9,226 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α

Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
2 - 4€ 7,44€ 14,88
6 - 18€ 6,53€ 13,06
20 - 38€ 6,29€ 12,58
40 - 98€ 6,11€ 12,22
100+€ 5,33€ 10,66

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

326 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1430pF

Maximum Operating Temperature

+175 °C

Energy Rating

4.3mJ

Λεπτομέρειες Προϊόντος

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more