Infineon IRFR5305PBF P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRLPBF
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
55 V
Series
IRFR5305PBF
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
7.49mm
Length
6.73mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
2.39mm
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€ 2,100.00
€ 0.70 Each (On a Reel of 3000) (Exc. Vat)
€ 2,604.00
€ 0.868 Each (On a Reel of 3000) (inc. VAT)
3000
€ 2,100.00
€ 0.70 Each (On a Reel of 3000) (Exc. Vat)
€ 2,604.00
€ 0.868 Each (On a Reel of 3000) (inc. VAT)
3000
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
55 V
Series
IRFR5305PBF
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
7.49mm
Length
6.73mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
2.39mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products