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IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P

Κωδικός Προϊόντος της RS: 194-530Κατασκευαστής: IXYSΚωδικός Κατασκευαστή: IXFH26N50PDistrelec Article No.: 17131366
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+150 °C

Height

21.46mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Philippines

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 12,09

€ 12,09 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 14,99

€ 14,99 Μονάδας Με Φ.Π.Α

IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P
Επιλέγξτε συσκευασία

€ 12,09

€ 12,09 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 14,99

€ 14,99 Μονάδας Με Φ.Π.Α

IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδας
1 - 4€ 12,09
5 - 9€ 12,01
10+€ 11,82

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+150 °C

Height

21.46mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Philippines

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more