Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
1000 V
Package Type
SOT-227B
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
890 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.07mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
38.23mm
Typical Gate Charge @ Vgs
305 nC @ 10 V
Height
9.6mm
Series
Polar HiPerFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Χώρα Προέλευσης
Philippines
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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P.O.A.
1
P.O.A.
1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
1000 V
Package Type
SOT-227B
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
890 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.07mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
38.23mm
Typical Gate Charge @ Vgs
305 nC @ 10 V
Height
9.6mm
Series
Polar HiPerFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Χώρα Προέλευσης
Philippines
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS