N-Channel MOSFET, 47 A, 30 V, 8-Pin PowerDFN56 MagnaChip MDU1516URH

Κωδικός Προϊόντος της RS: 871-5012Κατασκευαστής: MagnaChipΚωδικός Κατασκευαστή: MDU1516URH
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDFN56

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

35.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

14.6 nC @ 10 V

Width

5.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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N-Channel MOSFET, 47 A, 30 V, 8-Pin PowerDFN56 MagnaChip MDU1516URH
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P.O.A.

N-Channel MOSFET, 47 A, 30 V, 8-Pin PowerDFN56 MagnaChip MDU1516URH
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDFN56

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

35.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

14.6 nC @ 10 V

Width

5.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more