Nexperia N-Channel MOSFET, 100 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN2R6-40YS,115
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
131 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 12.00
€ 2.40 Each (In a Pack of 5) (Exc. Vat)
€ 14.88
€ 2.976 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 12.00
€ 2.40 Each (In a Pack of 5) (Exc. Vat)
€ 14.88
€ 2.976 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 10 | € 2.40 | € 12.00 |
| 15 - 70 | € 2.17 | € 10.85 |
| 75 - 370 | € 1.93 | € 9.65 |
| 375 - 745 | € 1.70 | € 8.50 |
| 750+ | € 1.44 | € 7.20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
131 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products