Nexperia N-Channel MOSFET, 76 A, 30 V, 4-Pin LFPAK, SOT-669 PSMN7R0-30YL,115
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
30 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.15V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
51 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.1mm
Length
5mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
1.1mm
Χώρα Προέλευσης
Philippines
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 855,00
€ 0,57 Μονάδας (Σε ένα καρούλι των 1500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.060,20
€ 0,707 Μονάδας (Σε ένα καρούλι των 1500) Με Φ.Π.Α
1500
€ 855,00
€ 0,57 Μονάδας (Σε ένα καρούλι των 1500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.060,20
€ 0,707 Μονάδας (Σε ένα καρούλι των 1500) Με Φ.Π.Α
1500
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
30 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.15V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
51 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.1mm
Length
5mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
1.1mm
Χώρα Προέλευσης
Philippines
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products