onsemi FGB40T65SPD-F085, P-Channel IGBT, 80 A 650 V, 2+Tab-Pin D2PAK (TO-263), Surface Mount
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
267 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
P
Pin Count
2+Tab
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Gate Capacitance
1520pF
Maximum Operating Temperature
+175 °C
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P.O.A.
800
P.O.A.
800
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
267 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
P
Pin Count
2+Tab
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Gate Capacitance
1520pF
Maximum Operating Temperature
+175 °C