onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through Hole

Κωδικός Προϊόντος της RS: 772-9231Κατασκευαστής: ON SemiconductorΚωδικός Κατασκευαστή: FGH40T100SMD
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Προβολή όλων σε IGBTs

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1000 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

333 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Λεπτομέρειες Προϊόντος

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through Hole
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onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through Hole
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Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Fairchild HGTG20N60A4D IGBT, 70 A 600 V, 3-Pin TO-247, Through Hole
P.O.A.Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
onsemi FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
€ 7,006Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
Fairchild HGTG30N60C3D IGBT, 63 A 600 V, 3-Pin TO-247, Through Hole
P.O.A.Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
Fairchild HGTG30N60A4D IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole
P.O.A.Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1000 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

333 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Λεπτομέρειες Προϊόντος

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Fairchild HGTG20N60A4D IGBT, 70 A 600 V, 3-Pin TO-247, Through Hole
P.O.A.Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
onsemi FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
€ 7,006Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
Fairchild HGTG30N60C3D IGBT, 63 A 600 V, 3-Pin TO-247, Through Hole
P.O.A.Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
Fairchild HGTG30N60A4D IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole
P.O.A.Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α