Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
8 x 3.25 x 11mm
Λεπτομέρειες Προϊόντος
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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Παρακαλούμε ελέγξτε ξανά αργότερα.
P.O.A.
Συσκευασία Παραγωγής (Ράγα)
10
P.O.A.
Συσκευασία Παραγωγής (Ράγα)
10
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
8 x 3.25 x 11mm
Λεπτομέρειες Προϊόντος
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.